APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 1-9 isotop absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v i c1 t c = 25c 120 i c2 continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 320 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 416 w if av maximum average forward current duty cycle=0.5 t c = 80c 30 if rms rms forward current (square wave, 50% duty) 39 a these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. k e c g v ces = 600v i c = 100a @ tc = 80c application ac and dc motor control switched mode power supplies power factor correction brake switch features non punch through (npt) thunderbolt igbt ? - low voltage drop - low tail current - switching frequency up to 100 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated isotop ? package (sot-227) very low stray inductance high level of integration benefits outstanding performance at high frequency operation stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance easy paralleling due to positive tc of vcesat isotop ? boost chopper npt igbt k c g e
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 2-9 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 100a 600 v t j = 25c 100 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 1000 a t j = 25c 2.0 2.5 v ce(on) collector emitter on voltage v ge =15v i c = 100a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 3 5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 4300 c oes output capacitance 470 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 400 pf q g total gate charge 330 q ge gate ? emitter charge 290 q gc gate ? collector charge v gs = 15v v bus = 300v i c = 100a 200 nc t d(on) turn-on delay time 26 t r rise time 25 t d(off) turn-off delay time 150 t f fall time 30 ns e on turn-on switching energy 3.35 e off turn off switching energy resistive switching (25c) v ge = 15v v bus = 400v i c = 100a r g = 5 2.85 mj t d(on) turn-on delay time 26 t r rise time 25 t d(off) turn-off delay time 170 t f fall time 40 ns e on turn-on switching energy 4.3 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 400v i c = 100a r g = 5 3.5 mj
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 3-9 diode ratings and characteristics symbol characteristic test conditions min typ max unit i f = 30a 1.6 1.8 i f = 60a 1.9 v f diode forward voltage i f = 30a t j = 125c 1.4 v v r = 600v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a c t junction capacitance v r = 200v 44 pf reverse recovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 23 t j = 25c 85 t rr reverse recovery time t j = 125c 160 ns t j = 25c 4 i rrm maximum reverse recovery current t j = 125c 8 a t j = 25c 130 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 700 nc t rr reverse recovery time 70 ns q rr reverse recovery charge 1300 nc i rrm maximum reverse recovery current i f = 30a v r = 400v di/dt =1000a/s t j = 125c 30 a thermal and package characteristics symbol characteristic min typ max unit igbt 0.3 r thjc junction to case diode 1.21 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 4-9 typical igbt performance curve output characteristics (v ge =15v) tc=-55c tc=25c tc=125c 0 50 100 150 200 250 300 350 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) tc=-55c tc=25c tc=125c 0 50 100 150 200 250 300 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =-55c t j =25c t j =125c 0 50 100 150 200 250 300 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=200a ic=100a ic=50a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=200a ic=100a ic=50a 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 gate charge (nc) v ge , gate to emitter voltage (v) i c = 100a t j = 25c
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 5-9 v ge = 15v 15 20 25 30 35 25 50 75 100 125 150 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 25c v ce = 400v r g = 5 ? v ge =15v, t j =25c v ge =15v, t j =125c 50 100 150 200 250 25 50 75 100 125 150 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 5 ? v ge =15v, t j =125c 0 20 40 60 80 25 50 75 100 125 150 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 5 ? t j = 25c t j = 125c 0 20 40 60 80 25 50 75 100 125 150 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 5 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 2 4 6 8 0 25 50 75 100 125 150 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v r g = 5 ? t j = 25c t j = 125c 0 1 2 3 4 5 6 0 255075100125150 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 5 ? eon, 200a eoff, 200a eon, 100a eoff, 100a eon, 50a eoff, 50a 0 4 8 12 16 0 1020304050 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c eon, 200a eoff, 200a eon, 100a eoff, 100a eon, 50a eoff, 50a 0 2 4 6 8 10 0 255075100125 t j , junction temperature (c) switching energy losses (mj) switching energy losses vs junction temp. v ce = 400v v ge = 15v r g = 5 ?
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 6-9 cies cres coes 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0 50 100 150 200 250 300 350 0 200 400 600 800 i c , collector current (a) minimum switching safe operating area v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current 0 20 40 60 80 100 120 20 40 60 80 100 120 i c , collector current (a) fmax, operating frequency (khz) v ce = 400v d = 50% r g = 5 ? t j = 125c
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 7-9 typical diode performance curve
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 8-9
APT100GF60JU2 APT100GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 9-9 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. isotop ? is a registered trademark of sgs thomson apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved. emitter gate collector cathode
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